Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology

Abstract

DMILL technology integrates mixed analog-digital very rad-hard (>10 Mrad and >10/sup 14/ neutron/cm/sup 2/) vertical bipolar, 0.8 /spl mu/m CMOS and 1.2 /spl mu/m PJFET transistors on SOI substrate. In this paper, after a presentation of the DMILL program goal, we discuss in more detail the main technological choices, the main milestones from the R&D to the industrial implementation, and the main results obtained after stabilization of the final process-flow in the MHS foundry.