Ideal carrier profile control for high-speed switching of 1200 V IGBTs

Abstract

A novel 1200 V Insulated Gate Bipolar Transistor (IGBT) for high-speed switching that combines Shorted Dummy-cell (SD) to control carrier extraction at the emitter side and P/P <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> collector to reduce hole injection from the backside is proposed. The SD-IGBT with P/P <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> collector has achieved 37 % reduction of turn-off power dissipation compared with a conventional Floating Dummy-cell (FD) IGBT. The SD-IGBT with P/P <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> collector also has high turn-off current capability because it extracts carriers uniformly from the dummy-cell. These results show the proposed device has a ideal carrier profile for high-speed switching.