Neutron-induced single event upsets in static RAMS observed a 10 km flight attitude

J. Olsen, P.E. Becher, P.B. Fynbo, P. Raaby, J. Schultz

IEEE Transactions on Nuclear Science · 1993 · 93 citations · 5 references

Concepts

Abstract

Observations of 14 neutron-induced single event upsets (SEUs) in static memory devices (SRAMs) at commercial aircraft flight altitudes are described. The observed SEU rate at a 10 km flight altitude based on an exposure of 160 standard 256 kb CMOS SRAMs is 4.8*10/sup -8/ upsets/b/day. In the laboratory, 117 SRAMs of two different brands were irradiated with fast neutrons from a Pu-Be source. A total of 176 SEUs have been observed, including two SEU pairs. The upset rates from the laboratory tests are compared to those found in the airborne SRAMs.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

References

5