Electron irradiation induced recombination centers in silicon-minority carrier lifetime control

Abstract

Recombination centers introduced in silicon p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -n-n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> structures by irradiation with 2-MeV electrons are studied by measuring minority carrier lifetime and annealing kinetics. The approximate location of these recombination centers in the forbidden gap and their densities are obtained by the thermally stimulated current method. The results identify one defect as a divacancy with an energy level of E <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</inf> + 0.26 eV. Possible identities of other deep levels are discussed. The technique of minority carrier lifetime control by electron irradiation has been developed into a reliable manufacturing process for power devices.