IEEE Transactions on Electron Devices · 1994 · 45 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsSemiconductor Device MaterialsSemiconductor Thin FilmsSilicon MaterialsThin Film Electrical PropertiesThin-film MaterialsThin-film TransistorsActivation EnergyAnnealing Temperature EffectsBand Tail StatesPolycrystalline SiliconPolycrystalline Silicon Thin-film TransistorsPolycrystalline Thin FilmsTemperature DependenceThreshold Voltage
The electrical characteristics of excimer laser annealed (ELA) polycrystalline-Si thin film transistors (poly-Si TFT's) were investigated. These results were compared to those of poly-Si TFT fabricated by solid phase crystallization (SPC). From the temperature dependence of the drain current, the activation energies of n-type poly-Si TFT's were obtained. The activation energies have negative values under the gate voltage from 0 to 5 V. The negative activation energy together with small threshold voltage (V/sub th/) are the main characteristics of ELA poly-Si TFT. Temperature dependencies of V/sub th/, and field effect mobility are very similar to those of SPC. From these results, it is concluded that the trap state density of ELA poly-Si TFT is very small and the electrical characteristics can be explained by the band tail states localized at the grain boundary.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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The physics of semiconductor devices
H. L. Grubin · IEEE Journal of Quantum Electronics · 1979 · 2.8K citations