EngineeringComputer EngineeringRadiation MeasurementRadiation PhysicsRadiation ProtectionHigh-dose Radiation EffectsRadiation Dose MeasurementHeavy Ion RadiationIonizing IrradiationRadiation Defect CharacterizationRadiation Source CharacterizationRadiation-hard DevicesRadiation-tolerant Semiconductor DevicesTotal Dose
Two single data-rate 512 Mb SDRAMs have been radiation characterized. The SDRAMs were not from the same manufacturer. The results of total ionizing dose, single event latchup and single event upset are presented. Radiation results show similarities in total ionizing dose level, but demonstrate different modes of failure. One SDRAM experienced single event latchup; whereas the other did not, and for this SDRAM, single event upset with heavy ion and proton testing yielded useable results.
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Single-event effects test results of 512MB SDRAMs
T. Langley, R. Koga, Tommy J Morris · 2004 · 28 citations
Engineering, Computer Engineering, Electrical Engineering +13