A 3-D vertical Hall magnetic field sensor in CMOS technology

Abstract

A novel silicon sensor capable of detecting all three magnetic-field components is presented. The device is based on a vertical Hall structure and has been designed and fabricated in a standard 2 mu m CMOS process. Furthermore, a second test structure was implemented by introducing slight changes to the initial design in order to investigate the possibility of increasing device sensitivity. The results show a linear response to magnetic field in the x-, y-, and z-directions for both devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>