Publication | Closed Access
SiGe technology: application to wireless digital communications
17
Citations
7
References
2002
Year
Unknown Venue
Wireless CommunicationsHeterojunction Bipolar TechnologyEngineeringSige Epitaxial BaseCommunication CircuitTransmission SystemIntegrated CircuitsSige Hbt DevelopmentSemiconductor DeviceElectromagnetic CompatibilitySemiconductorsElectronic DevicesSemiconductor TechnologyElectrical EngineeringComputer EngineeringSemiconductor Device FabricationRadio Over FiberApplied PhysicsSige Technology
Heterojunction bipolar technology using SiGe epitaxial base grown by ultra high vacuum/chemical vapor deposition (UHV/CVD) offers very high performance and very low cost for the production of wireless communication high frequency ICs. This paper reports on the status of SiGe HBT development and compares it with existing Si and GaAs technologies.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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