Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDs

Abstract

A low-temperature process developed for fabrication of high-mobility polycrystalline silicon thin-film transistors (poly-Si TFTs) is discussed. Its main feature is the use of a sputter-deposited Si film followed by laser irradiation and a sputter-deposited gate SiO/sub 2/ film. The poly-Si TFTs have a mobility of 350-cm/sup 2//V-s. They have been successfully applied to peripheral circuits for large-area liquid-crystal displays (LCDs).< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>