IEEE Microwave and Guided Wave Letters · 1999 · 25 citations · 5 references
Natural SciencesElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsThin FilmsDielectric PropertiesDielectricsHigh-frequency Semiconductor DevicesIntegrated Circuit DesignThin Film Electrical PropertiesThin-film MaterialsBreakdown StrengthCapacitanceCapacitance ReductionElectrical Breakdown StrengthElectrical PropertiesElectrical Properties AnalysisThin-film DielectricsYield Enhancement
We have fabricated advanced metal-insulator-metal (MIM) capacitors with ultra-thin (200 /spl Aring/) remote-PECVD Si/sub 3/N/sub 4/ dielectric layers having excellent electrical properties. The breakdown field strength of MIM capacitors with 200-/spl Aring/-thick Si/sub 3/N/sub 4/ was larger than 3.5 MV/cm, which indicates the excellent quality of the deposited Si/sub 3/N/sub 4/ film. The main capacitance per unit area extracted by radio frequency (RF) measurements was as high as 2900 pF/mm/sup 2/. Tenfold reduction of MIM capacitor size was successfully performed compared with conventional MIM capacitor with 2000-/spl Aring/ PECVD Si/sub 3/N/sub 4/ dielectric layer. Despite ultra-thin dielectric films of 200-/spl Aring/ thickness, the fabricated MIM capacitors showed good RF performance and high yield.
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