High-speed operation of 1.5μm GaInAsP/InP optoelectronic integrated laser drivers

Abstract

A 1.5μm-wavelength high-speed self-aligned constricted-mesa laser diode and an InP MESFET have been integrated monolithically without deterioration in the performance of either device, by using a gate projection process. A broad 3dB bandwidth of 6.6GHz was demonstrated for the first time.