Variable-range hopping in compensated epitactic n-InP

Abstract

The authors low-temperature data for variable-range-hopping conductivity in lightly doped, compensated n-InP gives: sigma = sigma 0 exp(-(T0/T)s) with 0.21<s<0.28. This indicates that the corresponding Mott law for this conductivity mechanism, now established for two-dimensional structures is also an adequate description for three-dimensional systems.