A high-performance N-channel MOSLSI using depletion-type load elements

Abstract

A design approach of the depletion-load inverter is given in which an attempt is made to obtain large noise margins. It is predicted that the circuit will operate with a 10-15 pJ/pF power- delay product at +5-V supply voltage. Some experimental integrated circuits were designed and fabricated by making use of a novel n-channel MOS technology that utilizes both enhancement and depletion-type MOSFET on a chip. A fully decoded transistor- transistor logic (TTL)-compatible READ-ONLY memory was fabricated, resulting in 300 ns total access time at a +5-V single power supply.