Unipolar $\hbox{TaO}_{x}$-Based Resistive Change Memory Realized With Electrode Engineering

Abstract

In this letter, a reproducible unipolar resistive change memory (RRAM) based on TaO <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> was successfully fabricated through electrode design. The fabricated unipolar RRAM exhibits lower switching voltages, fast switching speed of less than 80 ns, excellent retention capabilities, and stable cycling behaviors. Moreover, the role of top-electrode material on the resistive switching mode polarity of TaO <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> -based RRAM was verified by comparative experiments. Analysis about the electrode effect on the resistive switching mode polarity of TaO <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> -based RRAM with the theory of Gibbs free energy may provide some guidelines for the design of unipolar metal-oxide-based RRAM.