Structurally and Electrically Uniform Deposition of High-k TiO[sub 2] Thin Films on a Ru Electrode in Three-Dimensional Contact Holes Using Atomic Layer Deposition

Abstract

Atomic-layer-deposited (ALD) thin films with a high bulk dielectric constant were grown on an ALD Ru electrode at a growth temperature of . The films were grown on flat and contact hole structured Ru electrodes. The as-deposited films were crystallized with a rutile structure due to the adoption of oxidant with a very high concentration . The electrical measurements of the capacitors fabricated on the contact hole structures with different hole sizes and distances between the holes showed that the film's thickness, crystalline structure, and dielectric properties are uniform over the entire three-dimensional structure.