Jaehack Jeong

High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition

Seong Keun Kim, Wan-Don Kim, Kyung-Min Kim et al. · Applied Physics Letters · 2004 · 360 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Low Temperature (<100°C) Deposition of Aluminum Oxide Thin Films by ALD with O[sub 3] as Oxidant

Seong Keun Kim, Suk Woo Lee, Cheol Seong Hwang et al. · Journal of The Electrochemical Society · 2006 · 165 citations

Natural Sciences, Materials Engineering, Materials Science +17

Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate

Moonju Cho, Jaehoo Park, Hong Bae Park et al. · Applied Physics Letters · 2002 · 114 citations

Natural Sciences, Materials Engineering, Materials Science +17

Atomic Layer Deposition of Ru Thin Films Using 2,4-(Dimethylpentadienyl)(ethylcyclopentadienyl)Ru by a Liquid Injection System

Seong Keun Kim, Sang‐Young Lee, Sang Woon Lee et al. · Journal of The Electrochemical Society · 2007 · 93 citations

Natural Sciences, Materials Engineering, Materials Science +17

Thermal annealing effects on the structural and electrical properties of HfO2/Al2O3 gate dielectric stacks grown by atomic layer deposition on Si substrates

Moonju Cho, Hong Bae Park, Jaehoo Park et al. · Journal of Applied Physics · 2003 · 90 citations

Natural Sciences, Materials Engineering, Materials Science +17