Publication | Closed Access
SEU and MBU Angular Dependence of Samsung and Micron 8-Gbit SLC NAND-Flash Memories under Heavy-Ion Irradiation
14
Citations
7
References
2011
Year
Unknown Venue
Non-volatile MemoryElectrical EngineeringEngineeringHeavy-ion IrradiationPhysicsNanoelectronicsKr IrradiationMbu Angular DependenceApplied PhysicsFlash Memory8-Gbit Nand-flash MemoriesMemory DeviceSemiconductor MemoryMicroelectronicsOptoelectronicsOmnidirectional Sensitivity
The angular dependence of the SEU and MBU cross sections of two 8-Gbit NAND-Flash memories, Samsung and Micron, is measured under Ar, Fe, and Kr irradiation. The omnidirectional sensitivity is calculated based on experimental results.
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