Diffusion-Induced Imperfections in Silicon

Abstract

Diffusion‐induced dislocations and precipitates have been studied through electron microscopy as a function of the diffusion depth. High concentrations of phosphorus and arsenic were diffused in (111) Si wafers to a shallow depth under the condition of constant solute surface concentration. Extensive dislocation networks were observed in phosphorus diffused wafers, whereas only a few single dislocations were detected in arsenic‐diffused wafers. The results are shown to be in general agreement with Prussin's model of dislocation generation by relief of the stress due to solute lattice contraction of P and As.