Transactions on Electrical and Electronic Materials · 2011 · 43 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsNanotechnologySemiconductor DevicesCarbon NanomaterialsCarbon NanotubesDevice ScalingIntegrated Circuit DevicesNanoelectronicsNanotubesCarbon Nanotube Field-effect TransistorsDevice OptimizationVery-large-scale Integration
Carbon-nanotube metal oxide semiconductor field effect transistor (CN-MOSFET) is a promising future device candidate. The electrical characteristics of 16 nm N-type CN-MOSFETs are explored in this paper. The optimum N-type CN-MOSFET device profiles with different number of tubes are identified for achieving the highest on-state to off-state current ratio (<TEX>$I_{on}/I_{off}$</TEX>). The influence of substrate voltage on device performance is also investigated in this paper. Tradeoffs between subthreshold leakage current and overall switch quality are evaluated with different substrate bias voltages. Technology development guidelines for achieving high-speed, low-leakage, area efficient, and manufacturable carbon nanotube integrated circuits are provided.
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High-κ dielectrics for advanced carbon-nanotube transistors and logic gates
Ali Javey, Hyoungsub Kim, Markus Brink et al. · Nature Materials · 2002 · 969 citations
Jie Deng, H.‐S. Philip Wong · IEEE Transactions on Electron Devices · 2007 · 878 citations
Jie Deng, H.‐S. Philip Wong · IEEE Transactions on Electron Devices · 2007 · 744 citations
Engineering, Computer Engineering, Electrical Engineering +17