Single event charge collection modeling in CMOS multi-junctions structure

Abstract

Simulation was utilized to enable the study of the time dependent carrier and potential distributions that occur following the impact of heavy ion in multi-junction structures associated with CMOS technology. These simulations reveal a charge collection process which is quite complex However, the process can be more readily understood in it is broken into phases in which only a few mechanisms dominate the overall behavior. These phases, denoted the funneling phase and bipolar phase, can be represented by simple analytic models. The quantitative predictions of this model are shown to compare well with simulations.