Temperature effects and long term fading of implanted and unimplanted gate oxide RADFETs

Abstract

Key aspects of continuous operation of Radiation Sensitive Field Effect Transistors (RADFETs) as radiation monitors in space missions are addressed. The effect of possible temperature fluctuations and long-term fading on threshold-voltage measurement of Implanted and Unimplanted gate oxide RADFETs were studied. Evidence for temperature coefficient changes following irradiation and annealing cycles is presented. In addition, fading of unimplanted gate oxide RADFETs is shown to be significantly lower than that of Implanted ones.