IEEE Journal of Quantum Electronics · 1972 · 131 citations · 8 references
Natural SciencesMaterials SciencePhysicsOptical MaterialsOpticsOptoelectronicsLaser PhysicsOptical Properties Of MaterialsOptical Properties Of SemiconductorsRadiation Damage In MaterialsRadiation-resistant MaterialsSemiconductor ReliabilityAvalanche BreakdownLaser-induced EffectsLight-induced DamageOptical BreakdownPower DensityRadiation DamageRadiation Damage MechanismsSurface Damage
This paper discusses the probabilistic nature of the damaging interaction between light and matter. It is shown that when one recognizes that there is some probability to induce damage at any level of optical irradiation, then the reported irreproducible damage-resistance properties of many useful materials can be understood. This point of view also explains why some optical components may be safely irradiated many times before damage occurs, though no other change in the material can be detected prior to the observation of damage. Experimental data showing the probability for surface damage as a function of power density are presented for several materials. The dependence of damage probability on optical field strength is similar to that of the dc ionization coefficients for semiconductors and gases on the applied field. This observation is discussed and it is suggested that a form of avalanche breakdown might be the cause of laser-induced damage.
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Problems related to p-n junctions in silicon
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Ionization Rates for Electrons and Holes in Silicon
A. G. Chynoweth · Physical Review · 1958 · 580 citations
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Problems related top-n junctions in silicon
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