A subharmonically pumped resistive dual-HEMT-mixer

Abstract

A novel subharmonically pumped high electron mobility transistor (HEMT)-based resistive mixer is described. The mixer is based on a paralleled HEMT-configuration where the LO (local oscillator) is applied to the gates with the same amplitude but with opposite phase. A mixer prototype was constructed at X-band. A conversion loss of 6.5 dB was measured at an LO-power level of 12 dB/sub m/. A high LO-IF (intermediate frequency) and LO-RF isolation is obtained intrinsically due to LO-cancellation. HEMT-devices were fabricated and characterized, and a nonlinear device model was developed and used in harmonic balance simulations.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>