Carrier lifetimes in silicon

Abstract

Carrier lifetimes in semiconductors are being rediscovered by the Si IC community, because the lifetime is a very effective parameter to characterize the purity of a material or device. It has become a process and equipment characterization parameter. The various recombination mechanisms are discussed and the concept of recombination and generation lifetime is presented. We show that surface recombination/generation plays an important role in today's high purity Si and will become yet more important as bulk impurity densities in Si are reduced further. Furthermore, the dependence of lifetime on impurity energy level and minority carrier injection level is discussed. Concepts are stressed in the paper, with the necessary equations to clarify these concepts. Wherever possible, the concepts are augmented with experimental data, with particular emphasis on the case of iron in silicon, because Fe is one of the most important impurities in Si today. We have used Si in the examples because lifetime measurements are most commonly made in Si.