An n-channel BICFET in the GaAs/AlGaAs material system

Abstract

An n-channel BICFET (bipolar inversion channel FET) and an HFET (heterojunction FET) have been fabricated for the first time by MBE (molecular-beam epitaxy) growth with the charge sheet located on the wide-bandgap side of the heterointerface. This implementation is most desirable because of the potential for low resistance, high gain, and a temperature-stable structure. The HFET associated with the BICFET has a positive threshold, indicating that no channel exists in the equilibrium state.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>