Selective and nonselective deposition of aluminum by LPCVD using DMAH and microregion observation of single crystal aluminum with scanning μ-RHEED microscope

Abstract

A controllable method is described for the selective or nonselective growth of high-quality Al on Si(100), Si(111) and TiN versus SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> by low-pressure chemical vapor deposition (LPCVD) using a dimethylaluminum hydride (DMAH) source. The selectivity deposited Al on Si surface was confirmed to be single-crystal by microregion observation with a scanning μ-RHEED microscope. The authors produced high quality hillock-free and alloy-spike-free aluminum on Si, TiN and SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> with potential application to VLSI fabrication