Beyond the conventional transistor

TLDR

Nanotechnology is examined as a means to sustain progress in electronic systems built on silicon microelectronics. The paper aims to explore approaches for continuing CMOS scaling through new device structures and materials. The authors analyze performance improvement sources and present technology options such as high‑k dielectrics, metal gates, double‑gate and strained‑silicon FETs, and evaluate carbon‑nanotube FETs as a nanotechnology example.

Abstract

This paper focuses on approaches to continuing CMOS scaling by introducing new device structures and new materials. Starting from an analysis of the sources of improvements in device performance, we present technology options for achieving these performance enhancements. These options include high-dielectric-constant (high-k) gate dielectric, metal gate electrode, double-gate FET, and strained-silicon FET. Nanotechnology is examined in the context of continuing the progress in electronic systems enabled by silicon microelectronics technology. The carbon nanotube field-effect transistor is examined as an example of the evaluation process required to identify suitable nanotechnologies for such purposes.