Carrier-induced differential refractive index in GaInAsP-GaInAs separate confinement multiquantum well lasers

Abstract

Measurements of subthreshold spectra on SCMQW (separate-confinement multiquantum-well) lasers with the number of wells varying from three to nine have led to the determination of the carrier-induced differential refractive index d mu /dN approximately -3.6*10/sup -20/. This value is 1.8 greater than in the case of conventional bulk lasers. This study allows for a better understanding of quantum well laser parameters such as the spectral linewidth enhancement factor. It is also useful for the design of tunable lasers.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>