Linewidth Enhancement Factor in GaAs/AlGaAs Multi-Quantum-Well Lasers

Abstract

The linewidth enhancement factor α in GaAs/AlGaAs multi-quantum-well (MQW) lasers has been determined from the spontaneous emission spectra below threshold. It is demonstrated that the value of α in MQW lasers is appreciably smaller than that in conventional double heterostructure (DH) lasers because of the enhanced carrier-density-derivative of the optical gain.