The carrier-induced index change in AlGaAs and 1.3 µm InGaAsP diode lasers

Abstract

The carrier-induced index change has been measured for a large number of broad-area AlGaAs and 1.3 μm InGaAsP diode lasers. The observed index change with injected carrier density is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-(1.2 \pm 0.2) \times 10^{-20}</tex> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> for AlGaAs lasers and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-(2.8 \pm 0.6) \times 10^{20}</tex> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> for 1.3 μm lasers. The index change at threshold varies from -0.03 to -0.06 for AlGaAs lasers and from -0.04 to -0.10 for InGaAsP lasers. This variation is correlated with the carrier density at threshold, which depends on active layer thickness and doping level. For the first time, the observed index change is compared to the carrier density found from differential carrier lifetime measurements. This accurate determination of the carrier density represents a significant improvement over previous studies.