Heterostructures GexSi1−x/Si(001) grown by low-temperature (300–400°C) molecular beam epitaxy: Misfit dislocation propagation - Concepedia

Concepedia

Publication | Closed Access

Heterostructures GexSi1−x/Si(001) grown by low-temperature (300–400°C) molecular beam epitaxy: Misfit dislocation propagation

11

Citations

26

References

2005

Year

Yu. B. Bolkhovityanov, A. S. Deryabin, M. A. Revenko

Journal of Crystal Growth

Materials ScienceMaterials EngineeringEngineeringMisfit Dislocation PropagationApplied PhysicsMultilayer HeterostructuresOptoelectronic DevicesHeterostructures Gexsi1−x/siMolecular Beam EpitaxyEpitaxial GrowthSemiconductor Nanostructures

References

	Year	Citations

Page 1