Low resistivity of Pt silicide nanowires measured using double-scanning-probe tunneling microscope

Abstract

We measure the resistivity of platinum-silicide nanowires (Pt2Si NWs) epitaxially formed on a Si(100) surface using double-scanning-probe tunneling microscope. Despite the large Schottky barrier height reported on a macroscopic Pt2Si∕n-Si interface, leakage current through the substrate is observed in the resistance measurement, and is quantitatively estimated to be separated from the current through the nanowire. The measured resistivity of Pt2Si NWs is about half the reported resistivity of thick Pt2Si films, which could be due to additional conduction paths through surface or interface states on NWs.