Impact of random telegraph signals on V<inf>min</inf> in 45nm SRAM

Abstract

An alternating-bias random telegraph signal (RTS) characterization technique is presented, which shortens measurement time by 10x and also produces more accurate statistical distributions of RTS amplitudes. Measurements of RTS amplitudes in 45nm SRAM transistor I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</inf> and cell write margin are reported and used to demonstrate a complex dependence of write margin on RTS in multiple transistors. Fail bit rate of SRAM with RTS is estimated using a statistical model populated by I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">write</inf> measurements. Statistical analysis indicates a V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</inf> degradation of less than 50 mV due to RTS.