Remote charge scattering in MOSFETs with ultra-thin gate dielectrics

Abstract

In this work, we have studied the mobility degradation of inversion charge due to remote charge scattering (RCS), referring to scattering of mobile charges in the inversion layer by charged impurities present in the gate material of a MOSFET. The results indicate a 20-30% reduction in the electron mobility because of RCS, for gate oxide thicknesses lower than 15 /spl Aring/.