AC/DC Rectification With Indium Gallium Oxide Thin-Film Transistors

Abstract

Two circuits to accomplish ac/dc rectification using thin-film transistors (TFTs) based on amorphous oxide semiconductors are presented. The TFTs are implemented using either indium gallium oxide or zinc tin oxide as the channel layer material. One circuit is a full-bridge configuration while the second uses a cross-tied configuration to increase the output voltage. With an input of 7.07 <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rms</sub> at a frequency of 1 MHz, output voltages of ~ 9 and ~ 10.5 V, respectively, are observed. With a channel length of 15 ¿m, successful operation up to 20 MHz is demonstrated.