Modeling for electron transport in AlGaAs/GaAs/AlGaAs double-heterojunction structures

Abstract

Two-dimensionally quantized electron transport in modulation-doped double-heterojunction structures is investigated using a Monte Carlo simulation in which the energy quantization in a well is considered. Enhanced low-field mobility in the quantum well is observed with increased carrier density. This results from the reduction of optical phonon scattering rates, which can be attributed to the spread of two-dimensional electron gas. It is also demonstrated that carrier transport related to this enhancement and carrier confinement effectively contribute to device operation in a double-heterojunction FET.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>