Determination of XUV optical constants by reflectometry using a high-repetition rate 46.9-nm laser

Abstract

We report the measurement of the optical constants of Si, GaP, InP, GaAs, GaAsP, and Ir at a wavelength of 46.9 nm (26.5 eV). The optical constants were obtained from the measurement of the variation of the reflectivity as a function of angle utilizing, as an illumination source, a discharge pumped 46.9-nm table-top laser operated at a repetition rate of 1 Hz. These measurements constitute the first application of an ultrashort wavelength laser to materials research.