EngineeringAutomotive EngineeringElectrical EngineeringPower ElectronicsSemiconductor DevicesThermal AnalysisThermal ManagementThermal Properties Of SemiconductorsHigh-temperature Device OperationHigh-temperature ElectronicsHigh-temperature TestingPower MosfetsThermal Management Of Power Electronics
In this paper, we proposed a new 100 V rated power MOSFET, called "VLMOS (vertical LOCOS MOSFET)", and investigated characteristics of the VLMOS under high temperature. From simulation and experimental results, we verified that it overcame the "Si limit" and had superior temperature characteristics in specific on-resistance. This means that the VLMOS is excellent for wide-temperature range operations, especially for automotive applications.
3
A new generation of high voltage MOSFETs breaks the limit line of silicon
Gerald Deboy, N. Marz, Josef Štengl et al. · 2002 · 402 citations
Engineering, Electrical Engineering, Electronic Materials +13
Experimental results and simulation analysis of 250 V super trench power MOSFET (STM)
T. Nitta, T. Minato, Maasa Yano et al. · 2002 · 47 citations