Physical review. B, Condensed matter · 1978 · 162 citations · 25 references
EngineeringChemistryMaterials ScienceCondensed Matter PhysicsInterface ScienceSemiconductor MaterialsMetal-semiconductor ContactsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSurface PhysicsBarrier HeightsCarrier Tunneling Across InterfacesMetal-semiconductor InterfacesSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky BarriersSchottky ContactsSurface Diffusion Barriers
Experimental data on metal-semiconductor interfaces are reexamined. It is found that the previously reported abrupt transition between covalent and ionic semiconductors is not that clearly defined and the outcome is diffused by data scattering. Furthermore, the data indicate no saturation of the interface parameter $S$ for $S=1$. Considering the definition of $S$, it follows that the true Schottky limit should occur for some number $S\ensuremath{\approx}2.0\ensuremath{-}3.0$ rather than for exactly $S=1$ as previously claimed.
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Theory of Metal Surfaces: Charge Density and Surface Energy
N. D. Lang, W. Kohn · Physical review. B, Solid state · 1970 · 1.9K citations
Volker Heine · Physical Review · 1965 · 1.3K citations
Natural Sciences, Chemistry, Physics +12