IEEE Transactions on Electron Devices · 1990 · 59 citations · 8 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ModelingDevice SimulationMetal-oxide-semiconductor Field-effect TransistorsQuantum TunnelingShort-channel EffectsTunnelingGate Leakage CurrentGate Oxide LeakageGate Oxide Thickness EffectsImpurity DiffusionLeakage Current ModelingTunneling CurrentTunneling In SemiconductorsTunneling Phenomena
An accurate model and a numerical analysis of the subbreakdown phenomenon due to band-to-band tunneling in a thin-gate-oxide n-MOSFET is described. Results calculated by means of this model agree well with experimental results. This model provides a good understanding of the subbreakdown phenomenon. Furthermore, it shows how to design the distribution of impurity density in the drain region in order to suppress the subbreakdown current.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Zener tunneling in semiconductors
E. O. Kane · Journal of Physics and Chemistry of Solids · 1960 · 944 citations
The impact of gate-induced drain leakage current on MOSFET scaling
Subbreakdown drain leakage current in MOSFET
J. Chen, T.Y. Chan, I.C. Chen et al. · IEEE Electron Device Letters · 1987 · 301 citations
Corner-field induced drain leakage in thin oxide MOSFETs