A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Applications

Abstract

A 90nm technology node phase change memory (PCM) process, based on a chalcogenide material storage element with a vertical pnp bipolar junction transistor (BJT) selector device, is presented. The small cell area of 12F <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , the good electrical results, and the intrinsic reliability demonstrate the viability of the PCM cell concept. Programming currents as low as 400μA, very good distributional data achieved on multi-megabit arrays for programming (set and reset), endurance, and retention, demonstrate the suitability of PCM for fabrication of a high density array at 90nm