T. Marangon

Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications

F. Pellizzer, A. Pirovano, F. Ottogalli et al. · 2004 · 183 citations

Engineering, Computer Engineering, Electrical Engineering +13

A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Applications

F. Pellizzer, A. Benvenuti, B. Gleixner et al. · 2006 · 119 citations

Engineering, Electrical Engineering, Materials Science +15

Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond

A. Pirovano, F. Pellizzer, I. Tortorelli et al. · Solid-State Electronics · 2008 · 23 citations

Engineering, Electrical Engineering, Materials Science +11

Self-aligned μTrench phase-change memory cell architecture for 90nm technology and beyond

A. Pirovano, F. Pellizzer, I. Tortorelli et al. · 2007 · 23 citations

Engineering, Computer Engineering, Electrical Engineering +13

Initial reactions in Ti–Si bilayers: New indications from <i>in situ</i> measurements

R. Cocchi, D. Giubertoni, G. Ottaviani et al. · Journal of Applied Physics · 2001 · 15 citations

Natural Sciences, Materials Engineering, Materials Science +17