High-power AlGaN/GaN HFETs on Si substrates

Abstract

In this paper, GaN-based HFET devices on 4-inch Si substrates were fabricated, and the device characteristics were examined. As a result, the maximum drain current was estimated to be over 115 A using MIS-structures. A trade-off between the specific on-resistance (RonA) and the breakdown voltage (Vb) was improved using carbon doped buffer layers, resulting in obtaining RonA=3D 5.9 mΩcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and Vb=3D 1730 V simultaneously with the gate-width of a 340 mm. Furthermore, the gate field-plate structure was introduced into MIS-HFET structures. We have examined the suppression of a current collapse phenomenon owing to the combination of the gate field-plate structure and a conductive Si substrate with MIS-HFET devices.