2007 · 18 citations · 10 references
EngineeringComputer EngineeringElectrical EngineeringFault ToleranceFault-tolerant ComputingMicroelectronicsDefects In Electronic MaterialsDevice ReliabilityError DetectionMemory DevicesStorage Fault ToleranceAnnealing EffectsFlash MemoryFlash Memory DevicesFlash Memory ReliabilityNand Flash MemoryNon-volatile Memory DesignRadiation-hardened MemorySoft Errors
We tested the Static Errors response of NAND-Flash memories to heavy ions, and we observed error annealing during and after exposure. The amount of the annealing depends on the LET of the used ions.
10
Radiation effects on advanced flash memories
Duc N. Nguyen, S. M. Guertin, G.M. Swift et al. · IEEE Transactions on Nuclear Science · 1999 · 157 citations · Full text
Engineering, Computer Engineering, Electrical Engineering +17