Validation of an analytical large signal model for AlGaN/GaN HEMTs

Abstract

An analytical nonlinear model describing AlGaN/GaN HEMTs grown on sapphire substrates has been extracted based on measured device data. The model accounts for dispersion in transconductance and output conductance present in the devices. Model validations based on comparisons with DC I-V, S-parameter, 4 GHz time-domain waveforms, and 7 GHz power sweep data show good agreement between the model predictions and measurements.