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Basic principles of STT-MRAM cell operation in memory arrays
536
Citations
95
References
2013
Year
Non-volatile MemoryElectrical EngineeringEngineeringBasic PrinciplesIndividual CellsComputer ArchitectureComputer EngineeringMemoryMagnetoresistive Random-access MemoryReliable OperationMemory DeviceSemiconductor MemoryMicroelectronicsMemory ArchitectureChip Array Performance
For reliable operation, individual cells of an STT-MRAM memory array must meet specific requirements on their performance. In this work we review some of these requirements and discuss the fundamental physical principles of STT-MRAM operation, covering the range from device level to chip array performance, and methodology for its development.
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