A. Driskill-Smith - Concepedia

Author

A. Driskill-Smith

Also Known As

A DRISKILLSMITH, A Driskill-Smith, A. A. G. Driskill-Smith, A. Driskill-Smith, A.A.G. Driskill-Smith, Alexander A. Driskill-Smith, Alexander A.G. Driskill-Smith, Alexander Driskill-Smith

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

University of Cambridge University of Alabama University of Virginia Applied StemCell (United States)Hitachi Global Storage Technologies (United States)

About

A. Driskill-Smith is an author at University of Cambridge specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	17	2.1K
2	Applied Physics	10	10	1.3K
3	Biomedical Engineering	2	2	52
4	Education	1	1	15
5	Natural Sciences	1	1	173

A. Driskill-Smith

Publications

2.1K

Citations

H-Index

Page 1

	Year	Citations
Basic principles of STT-MRAM cell operation in memory arrays A. V. Khvalkovskiy, Dmytro Apalkov, Steven Watts, Journal of Physics D Applied Physics Non-volatile MemoryElectrical EngineeringEngineeringBasic PrinciplesIndividual Cells	2013	536
Spin-transfer torque magnetic random access memory (STT-MRAM) Dmytro Apalkov, A. V. Khvalkovskiy, Steven Watts, ACM Journal on Emerging Technologies in Computing Systems Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureMagnetic Memory Technology	2013	477
Advances and Future Prospects of Spin-Transfer Torque Random Access Memory E. Chen, Dmytro Apalkov, Zhuo Diao, IEEE Transactions on Magnetics Non-volatile MemoryFuture ProspectsEngineeringComputer ArchitectureMagnetism	2010	377
Spin transfer switching in dual MgO magnetic tunnel junctions Zhitao Diao, Alex Panchula, Yunfei Ding, Applied Physics Letters Non-volatile MemoryEngineeringSpin Dependent ResistancesEmerging Memory TechnologyMagnetic Resonance	2007	173
Fully integrated 54nm STT-RAM with the smallest bit cell dimension for high density memory application Suock Chung, K.-M. Rho, Sarim Kim, SpintronicsElectrical EngineeringMemory ArchitectureEngineeringMemory Design	2010	89
Latest Advances and Roadmap for In-Plane and Perpendicular STT-RAM A. Driskill-Smith, Dmytro Apalkov, V. Nikitin, Future Technology NodesNon-volatile MemoryEngineeringEmerging Memory TechnologyComputer Architecture	2011	85
The “nanotriode:” A nanoscale field-emission tube A. Driskill-Smith, D. G. Hasko, H. Ahmed Applied Physics Letters EngineeringNanocomputingVacuum DeviceNanostructured MaterialsSemiconductor Device	1999	60
Nanoscale field emission structures for ultra-low voltage operation at atmospheric pressure A. Driskill-Smith, D. G. Hasko, H. Ahmed Applied Physics Letters Electrical EngineeringEngineeringElectron Path LengthsNanotechnologyNanoelectronics	1997	53
Comparison of Scaling of In-Plane and Perpendicular Spin Transfer Switching Technologies by Micromagnetic Simulation Dmytro Apalkov, Steven Watts, A. Driskill-Smith, IEEE Transactions on Magnetics EngineeringFast PaceEmerging Memory TechnologyMagnetic ResonanceSpintronic Material	2010	47
Progress and Prospects of Spin Transfer Torque Random Access Memory E. Chen, Dmytro Apalkov, A. Driskill-Smith, IEEE Transactions on Magnetics Non-volatile MemoryEngineeringEmerging Memory TechnologyStt-ram Memory ChipsMagnetism	2012	42

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