Stable electrochemically passivated Si surfaces by ultra thin benzene-type layers

Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF

G. S. Higashi, R. S. Becker, Yves J. Chabal et al. · Applied Physics Letters · 1991 · 488 citations

Natural Sciences, Chemistry, Materials Science +17

Preparation of air-stable, low recombination velocity Si(111) surfaces through alkyl termination

William J. Royea, Agnes Juang, Nathan S. Lewis · Applied Physics Letters · 2000 · 188 citations

Natural Sciences, Chemistry, Materials Science +17

Surface dipole formation and non-radiative recombination at p-Si(111) surfaces during electrochemical deposition of organic layers

P. Hartig, Th. Dittrich, Jörg Rappich · Journal of Electroanalytical Chemistry · 2002 · 58 citations

Natural Sciences, Materials Engineering, Materials Science +17

Engineering of Si surfaces by electrochemical grafting of <i>p</i>-nitrobenzene molecules

P. Hartig, Jörg Rappich, Th. Dittrich · Applied Physics Letters · 2002 · 51 citations

Natural Sciences, Chemistry, Materials Science +17

Reduced interface state density after photocurrent oscillations and electrochemical hydrogenation of <i>n</i>-Si(111): A surface photovoltage investigation

Stefan Rauscher, Th. Dittrich, M. Aggour et al. · Applied Physics Letters · 1995 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +17