William J. Royea

Preparation of air-stable, low recombination velocity Si(111) surfaces through alkyl termination

William J. Royea, Agnes Juang, Nathan S. Lewis · Applied Physics Letters · 2000 · 186 citations

Engineering, Integrated Circuits, Chemistry +20

Fermi Golden Rule Approach to Evaluating Outer-Sphere Electron-Transfer Rate Constants at Semiconductor/Liquid Interfaces

William J. Royea, Arnel M. Fajardo, Nathan S. Lewis · The Journal of Physical Chemistry B · 1997 · 123 citations

A Comparison between Interfacial Electron-Transfer Rate Constants at Metallic and Graphite Electrodes

William J. Royea, Thomas W. Hamann, Bruce S. Brunschwig et al. · The Journal of Physical Chemistry B · 2006 · 75 citations

Engineering, Electrode-electrolyte Interface, Chemistry +18

Effects of Interfacial Energetics on the Effective Surface Recombination Velocity of Si/Liquid Contacts

Florian Gstrein, David J. Michalak, William J. Royea et al. · The Journal of Physical Chemistry B · 2002 · 32 citations

Engineering, Electrolyte Solutions, Chemistry +23

Role of inversion layer formation in producing low effective surface recombination velocities at Si/liquid contacts

William J. Royea, David J. Michalak, Nathan S. Lewis · Applied Physics Letters · 2000 · 26 citations

Engineering, Inversion Layer Formation, Chemistry +17