10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation

Abstract

In this paper, the extension of SiC power technology to higher voltage 10 kV/10 A SiC DMOSFETs and SiC JBS diodes is discussed. A new 10 kV/120 A SiC power module using these 10 kV SiC devices is also described which enables a compact 13.8 kV to 465/√3 solid state power substation (SSPS) rated at 1 MVA.